IRFS630A データシートの表示（PDF） - Fairchild Semiconductor
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IRFS630A Datasheet PDF : 7 Pages
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IRFS630A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol
BVDSS
∆BV/∆TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
200 -- --
-- 0.21 --
2.0 -- 4.0
-- -- 100
-- -- -100
-- -- 10
-- -- 100
V VGS=0V,ID=250µA
V/oC ID=250 µA See Fig 7
V VDS=5V,ID=250µA
nA VGS=30V
VGS=-30V
VDS=200V
µA VDS=160V,TC=125 oC
Static Drain-Source
On-State Resistance
-- -- 0.4 Ω VGS=10V,ID=3.25A
O4
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 3.58 -- Ω VDS=40V,ID=3.25A
O4
-- 500 650
-- 95 110 pF VGS=0V,VDS=25V,f =1MHz
See Fig 5
-- 45 55
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 13 40
-- 13 40
VDD=100V,ID=9A,
-- 30 70 ns RG=12 Ω
See Fig 13
-- 18 50
O4 O5
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
-- 22 29
-- 4.3 --
-- 10.9 --
VDS=160V,VGS=10V,
nC
ID=9A
See Fig 6 & Fig 12
O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- 6.5
Integral reverse pn-diode
A
-- 36
in the MOSFET
O4 -- -- 1.5 V TJ=25oC,IS=6.5A,VGS=0V
-- 137 -- ns TJ=25oC,IF=9A
-- 0.68 -- µC diF/dt=100A/µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=5mH, IAS=6.5A, VDD=50V, RG=27Ω, Starting TJ =25 oC
O3 ISD<_ 9A, di/dt <_220A/µs, V DD <_ BVDSS , Starting TJ =25 oC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_ 2%
O5 Essentially Independent of Operating Temperature
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