IRGP4065PBF データシートの表示（PDF） - International Rectifier
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IRGP4065PBF Datasheet PDF : 7 Pages
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IRGP4065PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVCES
∆ΒVCES/∆TJ
VCE(on)
Collector-to-Emitter Breakdown Voltage 300
Breakdown Voltage Temp. Coefficient –––
–––
–––
Static Collector-to-Emitter Voltage
–––
–––
–––
0.23
1.20
1.35
1.75
2.35
–––
–––
1.40
–––
2.10
–––
V VGE = 0V, ICE = 1 mA
V/°C Reference to 25°C, ICE = 1mA
VGE = 15V, ICE = 25A e
VGE = 15V, ICE = 40A e
V VGE = 15V, ICE = 70A e
VGE = 15V, ICE = 120A e
––– 2.00 –––
VGE = 15V, ICE = 70A, TJ = 150°C
VGE(th)
∆VGE(th)/∆TJ
ICES
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
2.6 ––– 5.0 V VCE = VGE, ICE = 500µA
––– -11 ––– mV/°C
––– 2.0 25 µA VCE = 300V, VGE = 0V
––– 50 –––
VCE = 300V, VGE = 0V, TJ = 150°C
IGES
Gate-to-Emitter Forward Leakage
––– ––– 100 nA VGE = 30V
Gate-to-Emitter Reverse Leakage
––– ––– -100
VGE = -30V
gfe
Forward Transconductance
––– 26 ––– S VCE = 25V, ICE = 25A
Qg
Total Gate Charge
––– 62 ––– nC VCE = 200V, IC = 25A, VGE = 15Ve
Qgc
tst
EPULSE
Ciss
Coss
Gate-to-Collector Charge
Shoot Through Blocking Time
Energy per Pulse
Input Capacitance
Output Capacitance
––– 20 –––
100 ––– –––
––– 875 –––
––– 975 –––
––– 2200 –––
––– 110 –––
ns VCC = 240V, VGE = 15V, RG= 5.1Ω
L = 220nH, C= 0.40µF, VGE = 15V
µJ VCC = 240V, RG= 5.1Ω, TJ = 25°C
L = 220nH, C= 0.40µF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 100°C
VGE = 0V
pF VCE = 30V
Crss
Reverse Transfer Capacitance
––– 55 –––
ƒ = 1.0MHz,
See Fig.13
LC
Internal Collector Inductance
––– 5.0 –––
Between lead,
nH 6mm (0.25in.)
LE
Internal Emitter Inductance
––– 13 –––
from package
and center of die contact
Notes:
Half sine wave with duty cycle = 0.25, ton=1µsec.
Rθ is measured at TJ of approximately 90°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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