IRGB4055PBF データシートの表示（PDF） - International Rectifier
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IRGB4055PBF Datasheet PDF : 10 Pages
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IRGB/S4055PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVCES
∆ΒVCES/∆TJ
VCE(on)
Collector-to-Emitter Breakdown Voltage 300
Breakdown Voltage Temp. Coefficient –––
–––
–––
Static Collector-to-Emitter Voltage
–––
–––
–––
0.23
1.10
1.70
2.35
1.95
–––
–––
1.30
2.10
–––
–––
V
V/°C
V
V
V
V
VGE = 0V, ICE = 1 mA
Reference to 25°C, ICE = 1mA
e VGE = 15V, ICE = 35A
e VGE = 15V, ICE = 110A
e VGE = 15V, ICE = 200A
VGE = 15V, ICE = 110A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
2.6 ––– 5.0
V VCE = VGE, ICE = 1mA
∆VGE(th)/∆TJ
ICES
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
––– -11 ––– mV/°C
––– 2.0 25 µA VCE = 300V, VGE = 0V
––– 100 –––
VCE = 300V, VGE = 0V, TJ = 150°C
IGES
Gate-to-Emitter Forward Leakage
––– ––– 100 nA VGE = 30V
Gate-to-Emitter Reverse Leakage
––– ––– -100
VGE = -30V
gfe
Forward Transconductance
Qg
Total Gate Charge
–––
–––
38
132
–––
–––
e S VCE = 25V, ICE = 35A
nC VCE = 200V, IC = 35A, VGE = 15V
Qgc
Gate-to-Collector Charge
td(on)
Turn-On delay time
tr
Rise time
td(off)
Turn-Off delay time
tf
Fall time
––– 42 –––
— 44 57
— 39 55
— 245 308
— 152 198
IC = 35A, VCC = 180V
ns RG = 10Ω, L=250µH, LS= 150nH
TJ = 25°C
td(on)
tr
td(off)
tf
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
— 42 —
— 40 —
— 362 —
— 309 —
IC = 35A, VCC = 180V
ns RG = 10Ω, L=250µH, LS= 150nH
TJ = 150°C
tst
EPULSE
Ciss
Coss
Shoot Through Blocking Time
Energy per Pulse
Input Capacitance
Output Capacitance
100 ––– –––
––– 705 –––
––– 915 –––
––– 4280 –––
––– 200 –––
ns VCC = 240V, VGE = 15V, RG= 5.1Ω
L = 220nH, C= 0.40µF, VGE = 15V
µJ VCC = 240V, RG= 5.1Ω, TJ = 25°C
L = 220nH, C= 0.40µF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 100°C
VGE = 0V
pF VCE = 30V
Crss
Reverse Transfer Capacitance
––– 125 –––
ƒ = 1.0MHz,
See Fig.13
LC
Internal Collector Inductance
––– 5.0 –––
Between lead,
nH 6mm (0.25in.)
LE
Internal Emitter Inductance
––– 13 –––
from package
and center of die contact
Notes:
Half sine wave with duty cycle = 0.25, ton=1µsec.
Rθ is measured at TJ of approximately 90°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 70A.
2
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