IRHM7064(1996) データシートの表示（PDF） - International Rectifier
部品番号
コンポーネント説明
メーカー
IRHM7064 Datasheet PDF : 4 Pages
| |||
Previous Datasheet
Index
Next Data Sheet
IRHM7064, IRHM8064 Devices
Radiation Characteristics
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEX-FETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier
uses two radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and a
VDSS bias condition equal to 80% of the device
rated voltage per note 7. Pre- and post-radiation
limits of the devices irradiated to 1 x 105 Rads (Si)
are identical and are presented in Table 1, column
1, IRHM7064. The values in Table 1 will be met for ei-
ther of the two low dose rate test circuits that are
used.
Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 105
Rads (Si), no change in limits are specified in DC pa-
rameters.
High dose rate testing may be done on a special re-
quest basis, using a dose rate up to 1 x 1012 Rads
(Si)/Sec.
International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. Single
Event Effects characterization is shown in Table 3.
Table 1. Low Dose Rate
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)1
VSD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
IRHM7064 IRHM8064
100K Rads (Si) 1000K Rads (Si) Units
min. max. min. max.
Test Conditions
100 — 100 — V
VGS = 0V, ID = 1.0 mA
2.0 4.0 1.25 4.5
VGS = VDS, ID = 1.0 mA
— 100 — 100 nA
VGS = 20V
— -100 — -100
VGS = -20V
— 25 — 50 µA VDS = 0.8 x Max Rating, VGS = 0V
— 0.021 — 0.029 Ω
VGS = 12V, ID = 35A
— 3.0 — 3.0 V TC = 25°C, IS = 35A,VGS = 0V
Table 2. High Dose Rate
Parameter
VDSS Drain-to-Source Voltage
IPP
di/dt
L1
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Min. Typ Max. Min. Typ. Max. Units
Test Conditions
— — 48 — — 48 V Applied drain-to-source voltage
during gamma-dot
— 140 — — 140 — A Peak radiation induced photo-current
— 800 — — 160 — A/µsec Rate of rise of photo-current
0.1 — — 0.8 — — µH Circuit inductance required to limit di/dt
Table 3. Single Event Effects
Parameter Typ.
BVDSS
60
Units
V
LET (Si)
Fluence Range
Ion (MeV/mg/cm2) (ions/cm2) (µm)
Ni
28
1 x 105
~41
VDS Bias
(V)
60
VGS Bias
(V)
-5
To Order
Share Link: 