IRHM7150
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage 100
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
2.0
gfs
Forward Transconductance
8.0
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-to-Source Leakage Forward
IGSS
Gate-to-Source Leakage Reverse
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain (Miller) Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
LS + LD
Total Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Typ Max Units
V
0.13 V/°C
Test Conditions
VGS =0 V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
0.065
0.076 Ω
VGS = 12V, ID = 21A
VGS = 12V, ID = 34A
"
4.0 V
S( )
25
250
µA
100
-100 nA
160
35 nC
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 21A "
VDS= 80V,VGS=0V
VDS = 80V
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 34A
VDS = 50V
65
45
190
170 ns
VDD = 50V, ID = 14A,
VGS = 12V, RG = 2.35Ω
130
6.8
nH Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
4300
1200 pF
200
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
34
136
A
VSD Diode Forward Voltage
1.4 V
trr Reverse Recovery Time
570 nS
QRR Reverse Recovery Charge
5.8 µC
Tj = 25°C, IS = 34A, VGS = 0V ➃
Tj = 25°C, IF = 34A, di/dt ≤ 100A/µs
VDD ≤ 50V ➃
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-sink
Junction-to-Ambient
Min Typ Max Units
0.83
0.21 °C/W
48
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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