IRH8054 データシートの表示（PDF） - International Rectifier
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IRH8054 Datasheet PDF : 8 Pages
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PRraed-iIartriaodniaCthioanracteristics
IRH7054
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
100K Rads(Si)
Min Max
300 - 1000K Rads (Si) Units
Min Max
Test Conditions
BVDSS Drain-to-Source Breakdown Voltage
V/5 JD Gate Threshold Voltage
IGSS
Gate-to-Source Leakage Forward
IGSS
Gate-to-Source Leakage Reverse
IDSS
Zero Gate Voltage Drain Current
RDS(on) Static Drain-to-Source" ➃
On-State Resistance (TO-3)
RDS(on) Static Drain-to-Source" ➃
On-State Resistance (TO-204AE)
VSD
Diode Forward Voltage" ➃
1. Part numbers IRH7054,
2. Part number IRH3054, IRH4540 and IRH8054
60
2.0 4.0
60
V
1.25 4.5
100
-100
100 nA
-100
25
50 µA
0.027 0.027 Ω
0.027 0.027 Ω
1.4
1.4 V
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS=48V, VGS =0V
VGS = 12V, ID =45A
VGS = 12V, ID =45A
VGS = 0V, IS = 35A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy Range
VDS(V)
MeV/(mg/cm )) (MeV)
(µm) @VGS=0V @VGS=-5V@VGS=-10V @VGS=-15V @VGS=-20V
I
59.9
345
32.8 60
60
45
40
30
Br
36.8
305
39
40
35
30
25
20
70
60
50
40
BR
30
I
20
10
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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