IRH4150 データシートの表示（PDF） - International Rectifier
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IRH4150 Datasheet PDF : 12 Pages
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IRH7150
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
100K Rads(Si)1
Min Max
600 to 1000K Rads (Si)2 Units
Min Max
Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 200
—
200
—V
VGS(th) Gate Threshold Voltage
2.0 4.0 1.25 4.5
IGSS
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
— 100
— -100
— 100 nA
— -100
IDSS
Zero Gate Voltage Drain Current
RDS(on) Static Drain-to-Source ➃
—
25
— 50 µA
— 0.065 — 0.09 Ω
On-State Resistance (TO-3)
RDS(on) Static Drain-to-Source ➃
— 0.065 — 0.09 Ω
On-State Resistance (TO-204AA)
VSD
Diode Forward Voltage ➃
— 1.4 —
1.4 V
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS=80V, VGS =0V
VGS = 12V, ID =21A
VGS = 12V, ID =21A
VGS = 0V, IS = 34A
1. Part number IRH7150
2. Part numbers IRH3150, IRH4150 and IRH8150
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
MeV/(mg/cm2))
Cu
28
Br
36.8
Energy
(MeV)
285
305
Range
VDS(V)
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
43
100
100
100
80
60
39
100
90
70
50
—
120
100
80
Cu
60
Br
40
20
0
0
-5
-10
-15
-20
-25
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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