HY57V658020BTC-7I データシートの表示（PDF） - Hynix Semiconductor

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HY57V658020BTC-7I

4Mbit x 2 bank x 8 SDRAM, LVTTL, 100MHz

Hynix Semiconductor 

HY57V658020B

DC CHARACTERISTICS II (TA= -40 to 85°C, VDD=3.3±0.3V, VSS=0V)

Parameter

Symbol

Test Condition

Operating Current

Precharge Standby Current

in Power Down Mode

Precharge Standby Current

in Non Power Down Mode

Active Standby Current

in Power Down Mode

Active Standby Current

in Non Power Down Mode

IDD1

IDD2P

IDD2PS

IDD2N

IDD2NS

IDD3P

IDD3PS

IDD3N

IDD3NS

Burst length=1, One bank active

tRC ≥ tRC(min), IOL=0mA

CKE ≤ VIL(max), tCK = min

CKE ≤ VIL(max), tCK = ∞

CKE ≥ VIH(min), CS ≥ VIH(min), tCK = min

Input signals are changed one time during

2clks. All other pins ≥ VDD-0.2V or ≤ 0.2V

CKE ≥ VIH(min), tCK = ∞

Input signals are stable.

CKE ≤ VIL(max), tCK = min

CKE ≤ VIL(max), tCK = ∞

CKE ≥ VIH(min), CS ≥ VIH(min), tCK = min

Input signals are changed one time during

2clks. All other pins ≥ VDD-0.2V or ≤ 0.2V

CKE ≥ VIH(min), tCK = ∞

Input signals are stable.

Burst Mode Operating Current IDD4

tCK ≥ tCK(min), IOL=0mA

All banks active

CL=3

Auto Refresh Current

IDD5

tRRC ≥ tRRC(min), All banks active

Self Refresh Current

IDD6

CKE ≤ 0.2V

Speed

Unit Note

7I -75I -10SI

100 90

70 mA

1

2

mA

2

mA

15

mA

15

mA

5

mA

5

mA

30

mA

30

mA

mA

1

90

mA

210 200 160 mA

2

2

mA

3

500

uA

4

Note :

1.IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open

2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II

Rev. 0.2/Nov. 01

6

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