Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
部品番号
コンポーネント説明
HY57V658020BTC-75I データシートの表示(PDF) - Hynix Semiconductor
部品番号
コンポーネント説明
メーカー
HY57V658020BTC-75I
4Mbit x 2 bank x 8 SDRAM, LVTTL, 100MHz
Hynix Semiconductor
HY57V658020BTC-75I Datasheet PDF : 11 Pages
1
2
3
4
5
6
7
8
9
10
HY57V658020B
AC CHARACTERISTICS I
Note :
1. A new command can be given tRRC after self refresh exit
Parameter
RAS Cycle Time
Operation
Auto Refresh
RAS to CAS Delay
RAS Active Time
RAS Precharge Time
RAS to RAS Bank Active Delay
CAS to CAS Delay
Write Command to Data-In Delay
Data-In to Precharge Command
Data-In to Active Command
DQM to Data-Out Hi-Z
DQM to Data-In Mask
MRS to New Command
CAS Latency = 3
Precharge to Data Output
Hi-Z
CAS Latency = 2
Power Down Exit Time
Self Refresh Exit Time
Refresh Time
-7I
-75I
-10SI
Symbol
Unit
Min Max Min
Max
Min
Max
t
RC
65
-
65
-
70
-
ns
t
RRC
65
-
65
-
70
-
ns
t
RCD
20
-
20
-
20
-
ns
t
RAS
45 100K 45
100K
50
100K
ns
t
RP
20
-
20
-
20
-
ns
t
RRD
14
-
15
-
20
-
ns
t
CCD
1
-
1
-
1
-
CLK
t
WTL
0
-
0
-
0
-
CLK
t
DPL
2
-
2
-
2
-
CLK
t
DAL
5
-
5
-
4
-
CLK
t
DQZ
2
-
2
-
2
-
CLK
t
DQM
0
-
0
-
0
-
CLK
t
MRD
2
-
2
-
2
-
CLK
t
PROZ3
3
-
3
-
3
-
CLK
t
PROZ2
2
-
2
-
2
-
CLK
t
PDE
1
-
1
-
1
-
CLK
t
SRE
1
-
1
-
1
-
CLK
t
REF
-
64
-
64
-
64
ms
Note
1
Rev. 0.2/Nov. 01
8
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]