IS41C16256-60T データシートの表示（PDF） - Integrated Silicon Solution
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IS41C16256-60T Datasheet PDF : 19 Pages
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IS41C16256
IS41LV16256
ISSI ®
AC CHARACTERISTICS (Continued)(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
Symbol Parameter
tWP
tWPZ
tRWL
tCWL
Write Command Pulse Width(17)
WE Pulse Widths to Disable Outputs
Write Command to RAS Lead Time(17)
Write Command to CAS Lead Time(17, 21)
tWCS
tDHR
tACH
tOEH
Write Command Setup Time(14, 17, 20)
Data-in Hold Time (referenced to RAS)
Column-Address Setup Time to CAS
Precharge during WRITE Cycle
OE Hold Time from WE during
READ-MODIFY-WRITE cycle(18)
tDS
Data-In Setup Time(15, 22)
tDH
Data-In Hold Time(15, 22)
tRWC
tRWD
READ-MODIFY-WRITE Cycle Time
RAS to WE Delay Time during
READ-MODIFY-WRITE Cycle(14)
tCWD
tAWD
CAS to WE Delay Time(14, 20)
Column-Address to WE Delay Time(14)
tPC
tRASP
tCPA
EDO Page Mode READ or WRITE
Cycle Time(24)
RAS Pulse Width in EDO Page Mode
Access Time from CAS Precharge(15)
tPRWC
EDO Page Mode READ-WRITE
Cycle Time(24)
tCOH / tDOH Data Output Hold after CAS LOW
tOFF
Output Buffer Turn-Off Delay from
CAS or RAS(13,15,19, 29)
tWHZ
tCLCH
Output Disable Delay from WE
Last CAS going LOW to First CAS
returning HIGH(23)
tCSR
tCHR
tORD
CAS Setup Time (CBR REFRESH)(30, 20)
CAS Hold Time (CBR REFRESH)(30, 21)
OE Setup Time prior to RAS during
HIDDEN REFRESH Cycle
tREF
Refresh Period (512 Cycles)
tT
Transition Time (Rise or Fall)(2, 3)
-35
Min. Max.
5—
10 —
8—
8—
0—
30 —
15 —
-50
Min. Max.
8—
10 —
14 —
14 —
0—
40 —
15 —
8—
8—
0—
6—
80 —
45 —
0—
6—
100 —
50 —
25 —
30 —
12 —
30 —
30 —
15 —
35 100K
— 21
40 —
40 100K
— 27
45 56
5—
3 15
5—
3 15
3 15
10 —
3 15
10 —
8—
8—
0—
10 —
10 —
0—
—8
1 50
—8
1 50
-60
Min. Max.
10 —
10 —
15 —
15 —
0—
40 —
15 —
Units
ns
ns
ns
ns
ns
ns
ns
15 —
ns
0—
ns
10 —
ns
140 —
ns
80 —
ns
36 —
ns
49 —
ns
25 —
ns
60 100K
ns
— 34
ns
— ns
5—
ns
3 15
ns
3 15
ns
10 —
ns
10 —
ns
10 —
ns
0—
ns
—8
ms
1 50
ns
8
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. J
06/29/00
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