IS61C64AL データシートの表示（PDF） - Integrated Silicon Solution

部品番号

コンポーネント説明

メーカー

IS61C64AL

8K x 8 HIGH-SPEED CMOS STATIC RAM

Integrated Silicon Solution 

IS61C64AL

ISSI ®

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

Symbol

ICC1

ICC2

Parameter

VDD Operating

Supply Current

VDD Dynamic Operating

Supply Current

ISB1

TTL Standby Current

(TTL Inputs)

ISB2

CMOS Standby

Current (CMOS Inputs)

Test Conditions

VDD = Max., CE = VIL

IOUT = 0 mA, f = 0

VDD = Max., CE = VIL

IOUT = 0 mA, f = fMAX

VDD = Max.,

VIN = VIH or VIL

CE ≥ VIH, f = 0

VDD = Max.,

CE ≥ VDD – 0.2V,

VIN ≥ VDD – 0.2V, or

VIN ≤ 0.2V, f = 0

Com.

Ind.

Com.

Ind.

typ.(2)

Com.

Ind.

Com.

Ind.

typ.(2)

-10

Min. Max.

— 20

— 25

— 45

— 50

25

—1

—2

— 350

— 450

200

-12

Min. Max.

Unit

— 20

mA

— 25

— 35

mA

— 45

25

—1

mA

—2

— 350

µA

— 450

200

Note:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

2. Typical values are measured at VDD = 5V, TA = 25oC. Not 100% tested.

CAPACITANCE(1,2)

Symbol

CIN

COUT

Parameter

Input Capacitance

Output Capacitance

Conditions

VIN = 0V

VOUT = 0V

Max.

Unit

8

pF

10

pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 5.0V.

4

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

03/16/06

Share Link: