ISL22349 データシートの表示（PDF） - Intersil
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ISL22349 Datasheet PDF : 13 Pages
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ISL22349
Operating Specifications Over the recommended operating conditions unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
(Note 13) (Note 3) (Note 13) UNIT
ICC1
VCC Supply Current (volatile
write/read)
IV2CCCa=ct+iv3e.,6rVe,a1d0aknDdCwPr,itfeSCstLat=es4)00kHz; (for
2.5
mA
VCC Supply Current (volatile
write/read, non-volatile read)
IV2CCCa=ct+iv3e.,6rVe,a5d0aknDdCwPr,itfeSCstLat=es4)00kHz; (for
0.65
mA
ICC2
VCC Supply Current (non-volatile
write/read)
IV2CCCa=ct+iv5e.,5rVe,a1d0aknDdCwPr,itfeSCstLat=es4)00kHz; (for
4.0
mA
VCC Supply Current (non-volatile
write/read)
IV2CCCa=ct+iv5e.,5rVe,a5d0aknDdCwPr,itfeSCstLat=es4)00kHz; (for
ISB
VCC Current (standby)
VCC = +5.5V, 10k DCP, I2C interface in
standby state
VCC = +3.6V, 10k DCP, I2C interface in
standby state
VCC = +5.5V, 50k DCP, I2C interface in
standby state
VCC = +3.6V, 50k DCP, I2C interface in
standby state
ISD
VCC Current (shutdown)
VCC = +5.5V @ +85°C, I2C interface in
standby state
VCC = +5.5V @ +125°C, I2C interface in
standby state
VCC = +3.6V @ +85°C, I2C interface in
standby state
VCC = +3.6V @ +125°C, I2C interface in
standby state
3.0
mA
2.4
mA
525
µA
1.6
mA
350
µA
5
µA
6.5
µA
4
µA
5.5
µA
ILkgDig Leakage Current, at Pins A0, A1, A2, Voltage at pin from GND to VCC
-1
SHDN, SDA, and SCL
1
µA
tWRT DCP Wiper Response Time
SCL falling edge of last bit of DCP data byte
1.5
µs
(Note 11)
to wiper new position
tShdnRec DCP Recall Time from Shutdown
From rising edge of SHDN signal to wiper
1.5
µs
(Note 11) Mode
stored position and RH connection
SCL falling edge of last bit of ACR data byte
1.5
µs
to wiper stored position and RH connection
Vpor Power-on Recall Voltage
VccRamp VCC Ramp Rate
tD
Power-up Delay
Minimum VCC at which memory recall occurs 2.0
0.2
Vcc above Vpor, to DCP Initial Value
Register recall completed, and I2C Interface
in standby state
2.6
V
V/ms
3
ms
EEPROM SPECIFICATION
EEPROM Endurance
1,000,000
Cycles
EEPROM Retention
Temperature T < +55°C
50
Years
tWC
Non-volatile Write Cycle Time
(Note 12)
12
20
ms
4
FN6331.3
May 28, 2009
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