NX26F160A-5TE-R データシートの表示（PDF） - NexFlash -> Winbond Electronics
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NX26F160A-5TE-R
NexFlash -> Winbond Electronics
NX26F160A-5TE-R Datasheet PDF : 14 Pages
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NX26F080A
NX26F160
NX26F080A or
NX26F080A or
NX26F080A or
NX26F080A or
NX26F160
NX26F160
NX26F160
NX26F160
U0
U1
U2
U3
1
0 A0
0 A1
0 A2
0 A3
1 A0
0 A1
0 A2
0 A3
0 A0
1 A1
0 A2
0 A3
1 A0
1 A1
0 A2
0 A3
....
2
SCK
3
SIO
4
0 A0
0 A1
0 A2
1 A3
1 A0
0 A1
0 A2
1 A3
0 A0
1 A1
0 A2
1 A3
1 A0
1 A1
0 A2
1 A3
.... 5
NX26F080A or
NX26F160
NX26F080A or
NX26F160
NX26F080A or
NX26F160
NX26F080A or
NX26F160
6
U8
U9
U10
U11
7 Figure 2. NX26F080A or NX26F160 Used in a Multi-device Configuration with up to 16-Devices on the 2-wire NSX
FUNCTIONAL OVERVIEW
The NexFlash NX26F080A and NX26F160 provide up to
8M-bits or 16M-bits of non-volatile memory organized as
2,048 or 4,096 small sectors of 536 bytes (4,288 bits) each
(Figure 3). Each sector is individually addressable using
basic instruction sequences and control functions commu-
nicated through the devices 2-wire NXS interface.
Read and Erase/Write Instruction Sequences
The NX26F080A and NX26F160 have two basic instruction
sequences: Read and Erase/Write. Unlike some other
Flash technologies, the erase and write operations of the
NX26F080A and NX26F160 are performed together in one
single operation (as fast as 5 ms per sector). Thus,
pre-erase of the memory is not necessary.
Both Read and Erase/Write instructions are made up of a
series of serial bit fields that include command, sector
address, device address, and sector data. The Read
instruction sequence also allows the device to be polled for
Ready/Busy status.
Sector 0 (0000H)
4288 Bits (536 Bytes) Per Sector
8
Sector 1 (0001H)
Sector 2 (0002H)
9
10
Sectors 3-2045/4093
(0003-07FD/0FFDH)
11
Sector 2046/4094 (07FE/0FFEH)
12
Sector 2047/4095 (07FF/0FFFH)
Figure 3. NexFlash’s NX26F080A and NX26F160 Array
NexFlash Technologies, Inc.
3
PRELIMINARY NXSF006E-0801
08/22/01 ©
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