NX25F080A-3T-R データシートの表示（PDF） - NexFlash -> Winbond Electronics

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NX25F080A-3T-R

8M-BIT SERIAL FLASH MEMORY WITH 4-PIN SPI INTERFACE

NexFlash -> Winbond Electronics 

NX25F080A

Serial Flash Memory Array

The NX25F080A Serial Flash memory array is orga-

nized as 2,048 sectors of 536 bytes (4,288 bits) each,

as shown in Figure 4. The 536 bytes offer a convenient

format for applications that store and transfer data in a

DOS compatible sector size of 512 bytes. The additional

24 bytes per sector are provided for user-specified

sector management such as header, checksum, CRC,

or other related application requirements.

The Serial Flash memory of the NX25F080A is

byte-addressable. That is, each sector is individually

addressable and each byte within a sector is individually

addressable. This allows a single byte, or specified

sequence of bytes, to be read without having to clock an

entire 536-byte sector out of the device. Data can be

read directly from a sector in the flash memory array by

issuing a Read from Sector command from the SPI bus.

Data can be written to a sector in the Flash memory

array by means of the Serial SRAM using a Write to

Sector command or a Transfer SRAM to Sector

command.

After a sector has been written, the memory array will

become busy while it is programming the specified

non-volatile memory cells of that sector. This busy time

will not exceed tWP (~5 ms for 5V devices), during which

time the Flash array is unavailable for read or write

access. The device can be tested to determine the

array’s availability using the Ready/Busy status that is

available during most read commands, via the Status

Register, or on the Ready/Busy pin. Note that the SRAM

is always available, even when the memory array is

busy. See the Serial SRAM section for more details.

The NX25F080A does not require pre-erase. Instead,

the device incorporates an auto-erase-before-write

feature that automatically erases the addressed sector

at the beginning of the write operation. This allows for

fast and consistent programming times. It also simplifies

firmware support by eliminating the need for a separate

pre-erase algorithm and the complex management of

disproportional erase and write block sizes commonly

found in other devices.

Sector Address:

IS25F080A

S[10:0]

Sector 2047

7FFH

Sector 2046

7FEH

Byte 0

000H

Byte 0

000H

Byte Address: B[9:0]

Byte1

001H

Byte1

001H

Byte 2-533

002H-215H

Byte 2-533

002H-215H

Byte 534 Byte 535

216H

217H

Byte 534 Byte 535

216H

217H

Sector 3-2045

003H-7FDH

8M-bit Serial Flash Memory Array

2048 Byte-Addressable Sectors

of 536-Bytes each

Sector 1

001H

Sector 0

000H

Byte 0

000H

Byte 0

000H

Byte 1

001H

Byte 1

001H

Byte 2-533

002H-215H

Byte 2-533

002H-215H

Byte 534 Byte 535

216H

217H

Byte 534 Byte 535

216H

217H

Figure 4. NX25F080A Serial Flash Memory Array

4

NexFlash Technologies, Inc.

PRELIMINARY NXSF005C-0699

06/11/99 ©

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