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NX25F080A-3TI-R データシートの表示(PDF) - NexFlash -> Winbond Electronics

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NX25F080A-3TI-R
NexFlash
NexFlash -> Winbond Electronics NexFlash
NX25F080A-3TI-R Datasheet PDF : 25 Pages
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NX25F080A
Table 2. Write Protect Range Sector Selection (Hex)
Write Protect
Range Config. Bits
WR3 WR2 WR1 WR0
00 00
00 01
00 10
00 11
01 00
01 01
01 10
01 11
10 00
10 01
10 10
10 11
11 00
11 01
11 10
11 11
Write Protected Sectors
WD=0
WD=1
ALL
None
000 - 6FFH 700 - 7FFH
000 - 67FH 680 - 7FFH
000 - 5FFH 600 - 7FFH
000 - 57FH 580 - 7FFH
000 - 4FFH 500 - 7FFH
000 - 47FH 480 - 7FFH
000 - 3FFH 400 - 7FFH
000 - 37FH 380 - 7FFH
000 - 2FFH 300 - 7FFH
000 - 27FH 280 - 7FFH
000 - 1FFH 200 - 7FFH
000 - 17FH 180 - 7FFH
000 - 0FFH 100 - 7FFH
000 - 07FH 080 - 7FFH
NONE
ALL
HOLD-R/B, HR[1:0]
The Hold-Ready/Busy (HOLD-R/B) bits HR1 and HR0 are
located at bits CF[1:0] of the Configuration Register.
These two bits select one of four possible functions: no
connect, HOLD input, R/B Output, or R/B Output with
open drain. The factory setting for the pin is No Connect.
Warning: this pin is tied low in the Serial Flash Module and
must be left as a no connect (NC) for Serial Flash Module
Applications.
HR1 HR0 Pin Configuration
0
0
HOLD input
0
1
No Connect
1
0
R/B Output (Open Drain)
1
1
R/B Output
Configured as a R/B output, the pin can serve as a system
interrupt. When R/B is high the array is ready to be
programmed. When R/B is low, it is busy programming. If
configured with an open-drain, an external pull-up resistor
should be used.
As a HOLD input, the pin can be used in conjunction with
the CS and SCK pin to suspend a serial command
sequence without resetting the command. This can be
useful if a command is in process and a higher priority task
on the same SPI bus needs to be attended to. To suspend
a command, HOLD must be brought low while CS and
SCK are low. With HOLD low, further data on the SI pin is
ignored (even while SCK is clocked) and the SO pin goes
to a high impedance state. To resume the command
sequence, HOLD must be brought high when CS and
SCK are low. See timing diagrams
Status Register Bit Descriptions
The Status Register provides status of the Flash arrays
Ready/Busy condition (R/B), transfers between the SRAM
and program buffer (TX), Write-Enable/Disable (WE),
and Compare Not Equal (CNE). The register can be read
using the Read Status Register command (Figure 8).
Ready/Busy Status, BUSY
The BUSY status bit is located at bit ST[7] of the Status
Register. Testing the BUSY bit is one of several ways to
check Ready/Busy status of the array. At power-up the
BUSY bit is reset to 0.
BUSY=1 The memory array is busy programming.
BUSY=0 The memory array is ready for further use.
SRAM and Program Buffer Transfer, TR
The TR status bit is located at bit ST[6] of the Status
Register. The bit provides status primarily for use during
the Transfer SRAM to Program Buffer command and
Transfer Program Buffer to SRAM command. An active
state 1 indicates a transfer is in process and the SRAM or
Program Buffer are not available for use. The device will
indicate a BUSY state while the TR bit is active. Upon
power up the TR bit resets to 0.
TR=1 SRAM and Program Buffer Transferring.
TR=0 SRAM and Program Buffer Not Transferring.
Write Enable/Disable, WE
The WE status bit is located at bit ST[4] of the Status
Register. The bit provides write protect status of global
Write Enable and Write Disable commands. Upon power
up the WE bit resets to 0.
WE=1 Write Enabled, array can be written to.
WE=0 Write Disabled, array can not be written to.
The WE status bit can also be used to determine the state
of the WP (write protect) pin. This can be done by first
issuing the Write Enable Command and then reading the
WE status bit. If the status bit indicates a "0" (write disabled)
then the WP pin is likely held low.
8
NexFlash Technologies, Inc.
PRELIMINARY NXSF005C-0699
06/11/99 ©

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