Philips Semiconductors
Multistandard dual carrier stereo sound decoder
Product specification
TDA9873H
SYMBOL
PARAMETER
CONDITIONS
MIN.
VCAF
BAF(−3dB)
DC voltage at CAF1 and
CAF2
−3 dB audio frequency
bandwidth
dependent on intercarrier 0.6
frequency fFM
measured at AF1O and
AF2O; see Figs 7 and 8
Vo(FM)(rms) output level (RMS value)
upper limit dependent on 65
loop filter; note 4
lower limit dependent on −
CAF; CAF = 470 nF; note 5
measured at
−
AF1O and AF2O
Audio processing (pins 1, 2, 8 and 33)
Vo(rms)
AF output level (RMS value)
fmod = 300 Hz;
54% modulation;
switchable by I2C-bus;
note 6
normal gain
400
reduced gain
200
Vo(cl)(rms)
AF output clipping level
(RMS value)
VCC = 5 V; THD = 1.5%
1 400
RL
allowable load resistance
AC coupled
10
CL
allowable load capacitance
−
RL(DC)
allowable DC load resistance
100
Ro
output resistance
70
THD
total harmonic distortion
Vo(rms) = 0.5 V; fAF = 1 kHz −
αcs(AF)(stereo) AF channel separation (stereo without alignment; note 7
mode; complete signal path)
B/G or M (Korea)
25
standard
D/K standard
23
potentiometer alignment; 35
B/G, M and D/K standard;
notes 7 and 8
I2C-bus alignment;
notes 7 and 9
B/G and D/K standard 40
M standard
35
αct(AF)(dual)
AF crosstalk attenuation (dual fi = 1 kHz for signal A;
mode)
fi = 400 Hz for signal B;
∆f = ±50 kHz
complete signal path
65
stereo decoder only
70
αmute(AF)
mute attenuation of AF signal
75
TYP.
MAX.
−
2.6
80
−
−
20
250 −
500 600
250 300
−
−
−
−
−
1.5
−
−
150 300
0.2 0.5
30
−
27
−
40
−
45
−
40
−
70
−
75
−
80
−
UNIT
V
kHz
Hz
mV
mV
mV
mV
kΩ
nF
kΩ
Ω
%
dB
dB
dB
dB
dB
dB
dB
dB
2000 Apr 04
11