ISL84514 データシートの表示（PDF） - Intersil
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ISL84514 Datasheet PDF : 11 Pages
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ISL84514, ISL84515
Leakage Considerations
Reverse ESD protection diodes are internally connected
between each analog-signal pin and both V+ and GND.
One of these diodes conducts if any analog signal exceeds
V+ or GND.
Virtually all the analog leakage current comes from the ESD
diodes to V+ or GND. Although the ESD diodes on a given
signal pin are identical and therefore fairly well balanced,
they are reverse biased differently. Each is biased by either
V+ or GND and the analog signal. This means their leakages
will vary as the signal varies. The difference in the two diode
leakages to the V+ and GND pins constitutes the analog-
signal-path leakage current. All analog leakage current flows
between each pin and one of the supply terminals, not to the
other switch terminal. This is why both sides of a given
switch can show leakage currents of the same or opposite
polarity. There is no connection between the analog-signal
paths and V+ or GND.
Typical Performance Curves TA = 25oC, Unless Otherwise Specified
25
VCOM = (V+) - 1V
ICOM = 1mA
20
15
85oC
-40oC
10
25oC
5
3 4 5 6 7 8 9 10 11 12 13
V+ (V)
25
20
15
10
19
17
15
13
11
9
7
14
12
85oC
10
8 -40oC
6
4
0
2
85oC
25oC
-40oC
ICOM = 1mA
85oC
25oC
-40oC
25oC
4
6
8
VCOM (V)
V+ = 3.3V
V+ = 5V
V+ = 12V
10
12
FIGURE 7. ON RESISTANCE vs SUPPLY VOLTAGE
FIGURE 8. ON RESISTANCE vs SWITCH VOLTAGE
50
40
V+ = 5V
30
20
10
V+ = 3.3V
0
0
1
2
3
4
5
VCOM (V)
FIGURE 9. CHARGE INJECTION vs SWITCH VOLTAGE
3.0
2.5
-40oC
VINH
2.0
25oC 85oC
-40oC
VINL
1.5
25oC
1.0
85oC
0.5
2 3 4 5 6 7 8 9 10 11 12 13
V+ (V)
FIGURE 10. DIGITAL SWITCHING POINT vs SUPPLY VOLTAGE
8
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