ISPLSI1016EA データシートの表示（PDF） - Lattice Semiconductor

部品番号

コンポーネント説明

メーカー

ISPLSI1016EA

In-System Programmable High Density PLD

Lattice Semiconductor 

Specifications ispLSI 1016EA

Absolute Maximum Ratings 1

Supply Voltage VCC ................................ -0.5 to +7.0V

Input Voltage Applied ........................ -2.5 to VCC +1.0V

Off-State Output Voltage Applied ..... -2.5 to VCC +1.0V

Storage Temperature ................................ -65 to 150°C

Case Temp. with Power Applied .............. -55 to 125°C

Max. Junction Temp. (TJ) with Power Applied ... 150°C

1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional

W operation of the device at these or at any other conditions above those indicated in the operational sections of this specification

is not implied (while programming, follow the programming specifications).

NE DC Recommended Operating Conditions

R SYMBOL

O VCC

F VCCIO

5 S VIL

4A N VIH

PARAMETER

Supply Voltage

Commercial

Supply Voltage: Output Drivers

5V

3.3V

Input Low Voltage

Input High Voltage

TA = 0°C to + 70°C

MIN.

4.75

4.75

3.0

0

2.0

MAX. UNITS

5.25

V

5.25

V

3.6

V

0.8

V

Vcc+1

V

Table 2-0005/1016EA

H IG Capacitance (TA=25oC, f=1.0 MHz)

C ES SYMBOL

PARAMETER

A D C1

Dedicated Input, I/O, Y1, Y2, Y3, Clock Capacitance

(Commercial)

ispM 5V C2

Y0 Clock Capacitance

TYPICAL

8

UNITS

pf

TEST CONDITIONS

VCC = 5.0V, VPIN = 2.0V

10

pf

VCC = 5.0V, VPIN = 2.0V

Table 2-0006/1016EA

Erase/Reprogram Specifications

SE PARAMETER

U Erase/Reprogram Cycles

MINIMUM

10000

MAXIMUM

—

UNITS

Cycles

Table 2-0008/1016EA

4

Share Link: