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PLSI1032-90LTI データシートの表示(PDF) - Lattice Semiconductor

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PLSI1032-90LTI
Lattice
Lattice Semiconductor Lattice
PLSI1032-90LTI Datasheet PDF : 19 Pages
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Specifications ispLSI and pLSI 1032
Switching Test Conditions
Input Pulse Levels
GND to 3.0V
Input Rise and Fall Time
3ns 10% to 90%
Input Timing Reference Levels
1.5V
Output Timing Reference Levels
1.5V
Output Load
See figure 2
3-state levels are measured 0.5V from steady-state
active level.
Table 2- 0003
Figure 2. Test Load
Device
Output
+ 5V
R1
R2
Test
Point
CL*
Output Load Conditions (see figure 2)
Test Condition
A
B Active High
Active Low
Active High to Z
C at V - 0.5V
OH
Active Low to Z
at V + 0.5V
OL
R1
470
470
470
R2
390
390
390
390
390
CL
35pF
35pF
35pF
5pF
5pF
*CL includes Test Fixture and Probe Capacitance.
DC Electrical Characteristics
Over Recommended Operating Conditions
SYMBOL
PARAMETER
CONDITION
MIN. TYP.3 MAX. UNITS
VOL Output Low Voltage
IOL =8 mA
0.4
V
VOH Output High Voltage
IOH =-4 mA
2.4
V
IIL
Input or I/O Low Leakage Current 0V VIN VIL (MAX.)
-10
µA
IIH
Input or I/O High Leakage Current 3.5V VIN VCC
10
µA
IIL-isp isp Input Low Leakage Current 0V VIN VIL (MAX.)
– -150
µA
IIL-PU I/O Active Pull-Up Current
0V VIN VIL
– -150
µA
IOS1 Output Short Circuit Current
VCC = 5V, VOUT = 0.5V
– -200
mA
ICC2,4 Operating Power Supply Current VIL = 0.5V, VIH = 3.0V Commercial
130 190
mA
fTOGGLE = 1 MHz
Industrial/Military –
135 220
mA
1. One output at a time for a maximum duration of one second.
2. Measured using eight 16-bit counters.
3. Typical values are at V = 5V and T = 25oC.
CC
A
4. Maximum ICC varies widely with specific device configuration and operating frequency. Refer to the Power Consumption sec-
tion of this datasheet and Thermal Management section of this Data Book to estimate maximum ICC.
Table 2- 0007A-32-isp
4
1996 ISP Encyclopedia

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