10B1(2004) データシートの表示（PDF） - STMicroelectronics

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10B1
(Rev.:2004)

BIDIRECTIONAL TRANSIL™ ARRAY FOR DATALINE PROTECTION

STMicroelectronics 

ITAxxB1

Table 2: Absolute Ratings (Tamb = 25°C)

Symbol

Parameter

Value

Unit

PPP Peak pulse power (8/20µs) (see note 1)

Tj initial = Tamb

300

W

IPP Peak pulse current (8/20µs) (see note 1)

Tj initial = Tamb

40

A

I2t Wire I2t value (see note 1)

0.6

A2s

Tj Maximum operating junction temperature

125

°C

Tstg Storage temperature range

-55 to +150 °C

TL Maximum lead temperature for soldering during 10 s at 5mm for case

260

°C

Note 1: For surges greater than the specified maximum value, the I/O will first present a short-circuit and after an open circuit caused by

the wire melting.

Table 3: Electrical Characteristics (Tamb = 25°C)

Symbol

Parameter

VRM Stand-off voltage

VBR Breakdown voltage

VCL Clamping voltage

IRM Leakage current

IPP Peak pulse current

αT Voltage temperature coefficient

VF Forward voltage drop

C Capacitance

I

IPP

IRM

V

VRM VCL

VBR

Part Number

VBR

min.

note 2

@ IR IRM @

max.

V

mA µA

ITA6V5B1

6.5

1

10

ITA10B1

10

1

4

ITA18B1

18

1

4

ITA25B1

25

1

4

Note 2: Between I/O pin and ground.

Note 3: Between two input pins at 0V Bias, F = 1 MHz.

VRM

V

5

8

15

24

VCL @ IPP

8/20µs

note 2

V

A

10

10

15

10

25

10

33

10

VCL @ IPP αT

max. 8/20µs max.

note 2

V

A 10-4/°C

12

25

4

19

25

8

28

25

9

38

25

12

C

max.

note 3

pF

750

570

350

300

2/6

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