IXGH15N120B データシートの表示（PDF） - IXYS CORPORATION
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IXGH15N120B Datasheet PDF : 4 Pages
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IXGH 15N120B
IXGT 15N120B
8
7
TJ = 125°C
RG = 10Ω
6
5
E(OFF)
4
3
2
1
0
5 10 15 20 25 30 35
IC - Amperes
Fig. 7. Dependence of tfi and EOFF on IC.
16
14
IC = 15A
VCE = 600V
12
10
8
6
4
2
0
0
10
20
30
40
50
Qg - nanocoulombs
Fig. 9. Gate Charge
8
7 TJ = 125°C
6
IC = 30A
E(OFF)
5
4
3
IC = 15A
E(OFF)
2
1
IC = 7.5A
E(OFF)
0
0 10 20 30 40 50 60
RG - Ohms
Fig. 8. Dependence of tfi and EOFF on RG.
100
30
10
TJ = -55 to +125°C
RG = 10Ω
dV/dt < 5V/ns
1
0.1
0
200 400 600 800 1000 1200
VCE - Volts
Fig. 10. Turn-off Safe Operating Area
1
D=0.5
D=0.2
0.1 D=0.1
D=0.05
D=0.02
0.01 D=0.01
Single pulse
0.001
0.00001
0.0001
0.001
0.01
Pulse Width - Seconds
Fig. 11. Transient Thermal Resistance
IXGH15N120B-P2
D = Duty Cycle
0.1
1
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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