IXGA12N60CD1 データシートの表示（PDF） - IXYS CORPORATION
部品番号
コンポーネント説明
メーカー
IXGA12N60CD1 Datasheet PDF : 2 Pages
| |||
Symbol
gfs
C
ies
Coes
C
res
Qg
Q
ge
Qgc
t
d(on)
tri
t
d(off)
tfi
E
off
t
d(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
5 11
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
860
pF
100
pF
15
pF
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
32
nC
10
nC
10
nC
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 300 µH
VCE = 0.8 VCES, RG = Roff = 18 Ω
Remarks: Switching times may increase for
VCE (Clamp) > 0.8 VCES, higher TJ or
increased RG
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 300 µH
VCE = 0.8 VCES, RG = Roff = 18 Ω
Remarks: Switching times may increase for
VCE (Clamp) > 0.8 VCES, higher TJ or
increased RG
20
ns
20
ns
60
ns
55
ns
0.09
mJ
20
ns
20
ns
0.5
mJ
85 180 ns
85 180 ns
0.27 0.60 mJ
IGBT
1.25 K/W
0.25
K/W
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IRM
trr
RthJC
IF = 15A; TVJ = 150°C
TVJ = 25°C
VR = 100 V; IF =25A; -diF/dt = 100 A/µs
L < 0.05 µH; TVJ = 100°C
IF = 1 A; -di/dt = 50 A/µs;
VR = 30 V TJ = 25°C
Diode
1.7
V
2.5 V
2 2.5 A
35
ns
1.6 K/W
Min. Recommended Footprint
IXGA 12N60CD1
IXGP 12N60CD1
TO-220 AB (IXGP) Outline
Dim. Millimeter
Min. Max.
A 12.70 13.97
B 14.73 16.00
C 9.91 10.66
D 3.54 4.08
E 5.85 6.85
F 2.54 3.18
G 1.15 1.65
H 2.79 5.84
J 0.64 1.01
K 2.54 BSC
M 4.32 4.82
N 1.14 1.39
Q 0.35 0.56
R 2.29 2.79
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
TO-263 AA (IXGA) Outline
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
0.51 0.99
1.14 1.40
0.46 0.74
1.14 1.40
8.64 9.65
7.11 8.13
9.65 10.29
6.86 8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .015
.018 .029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
Share Link: 