IXTT100N25P データシートの表示（PDF） - IXYS CORPORATION

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IXTT100N25P

PolarHT™ Power MOSFET

IXYS CORPORATION 

Symbol

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg(on)

Qgs

Qgd

RthJC

RthCK

RthCK

IXTQ 100N25P IXTT 100N25P

IXTK 100N25P

Test Conditions

Characteristic Values

(TJ = 25°C, unless otherwise specified)

Min. Typ. Max.

VDS= 10 V; ID = 0.5 ID25, pulse test

40 56

S

6300

pF

VGS = 0 V, VDS = 25 V, f = 1 MHz

1150

pF

240

pF

TO-3P Outline

123

VGS = 10 V, VDS = 0.5 VDSS, ID = ID25

RG = 3.3 Ω (External)

25

ns

26

ns

100

ns

28

ns

VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25

185

nC

43

nC

91

nC

TO-3P

TO-264

0.21

0.15

0.21 K/W

K/W

K/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(TJ = 25°C, unless otherwise specified)

Min. typ. Max.

IS

VGS = 0 V

100 A

ISM

Repetitive

250 A

VSD

IF = IS, VGS = 0 V,

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

1.5 V

trr

IF = 25 A

-di/dt = 100 A/µs

QRM

VR = 100 V

200

ns

3.0

µC

TO-268 Outline

TO-264 Outline

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

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