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2324-5 データシートの表示(PDF) - GHz Technology

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2324-5 Datasheet PDF : 3 Pages
1 2 3
2324-5
5 Watts, 24 Volts, Class C
Microwave 2300-2400 MHz
GENERAL DESCRIPTION
The 2324-5 is a common base transistor capable of providing 5 Watts of Class
C, RF output power over the band 2300-2400 MHz. This transistor is
specifically designed for Microwave Broadband Class C amplifier
applications. It includes Input and Output Pre Matching and utilizes gold
metalization and diffused ballasting to provide high reliability and supreme
ruggedness. The transistor uses a fully hermetic High Temperature Solder
sealed package.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
22 Watts
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
40 Volts
3.5 Volts
1.25 Amps
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 200oC
+ 200oC
CASE OUTLINE
55AQ, STYLE 1
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST
CONDITIONS
Pout
Pin
Pg
Ir
VSWR
Power Out
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
F = 2.3 - 2.4 GHz
Vcc = 24 Volts
MIN TYP MAX UNITS
5
Watts
0.70 Watts
9.0
dB
40
%
10:1
BVebo
BVces
Hfe
Cob
Rth
Emitter to Base Breakdown
Ie = 10 mA
3.5
Collector to Emitter Breakdown Ie =50 mA
40
DC Current Gain
Vce =5 V, Ic=160mA 20
Output Capacitance*
Thermal Resistance
* Not measureable due to internal prematch network
Rev 1, April 1995
Volts
Volts
8.0
oC/W
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

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