IRHM7460SE データシートの表示（PDF） - International Rectifier

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IRHM7460SE

RADIATION HARDENED POWER MOSFET THRU - HOLE ( TO - 254AA )

International Rectifier 

Pre-Irradiation

IRHM7460SE

8000

6000

4000

2000

VGS = 0V, f = 1MHz

Ciss = Cgs + Cgd , Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

Coss

Crss

0

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

20 ID = 18A

16

12

VDS = 400V

VDS = 250V

VDS = 100V

8

4

FOR TEST CIRCUIT

0

SEE FIGURE 13

0

40

80

120

160

200

QG , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

TJ = 150° C

10

TJ = 25° C

1

0.1

0.2

VGS = 0 V

0.6

1.0

1.4

1.8

2.2

VSD ,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

www.irf.com

1000

OPERATION IN THIS AREA LIMITED

BY RDS(on)

100

10us

100us

10

1ms

TC

TJ

=

=

25 ° C

150° C

Single Pulse

1

10

100

10ms

1000

VDS , Drain-to-Source Voltage (V)

10000

Fig 8. Maximum Safe Operating Area

5

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