K6R1016V1D(2001) データシートの表示（PDF） - Samsung

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K6R1016V1D
(Rev.:2001)

64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)

Samsung 

K6R1016V1D

for AT&T

CMOS SRAM

Document Title

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating)

Operated at Commercial and Industrial Temperature Ranges.

Revision History

Rev. No.

History

Rev. 0.0

Rev. 0.1

Rev. 0.2

Initial document.

Speed bin modify

Current modify

Rev. 1.0

1. Delete 12ns speed bin.

2. Change Icc for Industrial mode.

Item

Previous

ICC(Industrial)

8ns

10ns

100mA

85mA

Current

90mA

75mA

Draft Data

May. 11. 2001

June. 18. 2001

September. 9. 2001

December. 18. 2001

Remark

Preliminary

Preliminary

Preliminary

Final

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,

please contact the SAMSUNG branch office near your office, call or contact Headquarters.

-1-

Revision 1.0

December 2001

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