K6T0808C1D-B データシートの表示（PDF） - Samsung
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K6T0808C1D-B Datasheet PDF : 9 Pages
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K6T0808C1D Family
CMOS SRAM
32Kx8 bit Low Power CMOS Static RAM
FEATURES
• Process Technology: TFT
• Organization: 32Kx8
• Power Supply Voltage: 4.5~5.5V
• Low Data Retention Voltage: 2V(Min)
• Three state output and TTL Compatible
• Package Type: 28-DIP-600B, 28-SOP-450
28-TSOP1-0813.4 F/R
GENERAL DESCRIPTION
The K6T0808C1D families are fabricated by SAMSUNG′s
advanced CMOS process technology. The families support
various operating temperature ranges and have various
package types for user flexibility of system design. The fami-
lies also support low data retention voltage for battery back-
up operation with low data retention current.
PRODUCT FAMILY
Product Family Operating Temperature
K6T0808C1D-L
K6T0808C1D-B
Commercial (0~70°C)
K6T0808C1D-P
K6T0808C1D-F
Industrial (-40~85°C)
1. The parameter is tested with 50pF test load.
VCC Range
4.5 to 5.5V
Speed
551)/70ns
70ns
Power Dissipation
Standby
(ISB1, Max)
30µA
Operating
(Icc2, Max)
5µA
30µA
60mA
5µA
PKG Type
28-DIP-600B, 28-SOP-450
28-TSOP1-0813.4 F/R
28-SOP-450
28-TSOP1-0813.4 F/R
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
OE
1
A11
2
A9
3
A14 1
A8
4
28 VCC A13
5
A12 2
27
WE
WE
6
VCC
7
A7 3
A6 4
26 A13 A14
8
A12 9
25 A8
A7
10
A5 5
A6
11
24 A9
A5
12
A4 6
23 A11 A4
13
A3
14
A3 7 28-DIP 22 OE
A2 8 28-SOP 21 A10 A3 14
A1 9
A4
13
20 CS A5
12
A0 10
19
A6
I/O8
11
A7
10
I/O1 11
I/O2 12
I/O3 13
18 I/O7 A12
9
A14 8
17 I/O6 VCC 7
WE
6
16 I/O5 A13
5
VSS 14
15 I/O4 A8
4
A9
3
A11
2
OE
1
28-TSOP
Type1 - Forward
28-TSOP
Type1 - Reverse
28 A10
27
CS
26 I/O8
25 I/O7
24 I/O6
23 I/O5
22 I/O4
21 VSS
20 I/O3
19 I/O2
18 I/O1
17
A0
16
A1
15
A2
15
A2
16
A1
17
A0
18 I/O1
19 I/O2
20 I/O3
21 VSS
22 I/O4
23 I/O5
24 I/O6
25 I/O7
26 I/O8
27
CS
28 A10
Pin Name
Function
Pin Name
Function
CS
CS
Chip Select Input
I/O1~I/O8 Data Inputs/Outputs
WE
OE
Output Enable Input
Vcc
Power
OE
WE Write Enable Input
Vss
Ground
A0~A14 Address Inputs
NC
No connect
A13
A8
A12
A14
A4
A5
A6
A7
I/O1
I/O8
Control
Logic
Clk gen.
Precharge circuit.
Row
select
Memory array
256 rows
128×8 columns
Data
cont
I/O Circuit
Column select
Data
cont
A10 A3 A0 A1 A2 A9 A11
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
Revision 1.01
November 1997
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