K6X4016T3F-TB85 データシートの表示（PDF） - Samsung
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K6X4016T3F-TB85 Datasheet PDF : 9 Pages
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K6X4016T3F Family
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS1)
Supply voltage
Item
Symbol
Min
Vcc
2.7
Ground
Vss
Input high voltage
VIH
Input low voltage
VIL
Note:
1. Commercial Product: TA=0 to 70°C, otherwise specified.
Industrial Product: TA=-40 to 85°C, otherwise specified.
Automotive Product: TA=-40 to 125°C, otherwise specified.
2. Overshoot: VCC+2.0V in case of pulse width ≤ 30ns.
3. Undershoot: -2.0V in case of pulse width ≤ 30ns.
4. Overshoot and undershoot are sampled, not 100% tested.
0
2.2
-0.23)
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Typ
3.0/3.3
0
-
-
Min
-
-
Max
3.6
0
Vcc+0.22)
0.6
Unit
V
V
V
V
Max
Unit
8
pF
10
pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Input leakage current
ILI
VIL=Vss to Vcc
Output leakage current
ILO CS=VIH or OE=VIH or WE=VIL VIO=Vss to Vcc
Operating power supply current ICC IIO=0mA, CS=VIL, VIN=VIL or VIH, Read
Average operating current
ICC1
Cycle time=1µs, 100% duty, IIO=0mA CS≤0.2V,
VIN≤0.2V or VIN≥Vcc-0.2V
ICC2 Cycle time=Min2), 100% duty, IIO=0mA, CS=VIL,
VIN=VIH or VIL
Output low voltage
VOL IOL=2.1mA
Output high voltage
VOH IOH=-1.0mA
Standby Current(TTL)
ISB CS=VIH, Other inputs=VIL or VIH
Standby Current(CMOS)
ISB1
CS≥Vcc-0.2V, Other
inputs=0~Vcc
K6X4016T3F-B
K6X4016T3F-F
K6X4016T3F-Q
Min Typ Max Unit
-1
-
1 µA
-1
-
1 µA
-
-
2 mA
-
-
3 mA
-
- 25 mA
-
- 0.4 V
2.4 -
-
V
-
- 0.3 mA
-
- 10 µA
-
- 10 µA
-
- 20 µA
4
Revision 1.0
August 2003
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