DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

K9F1208D0A データシートの表示(PDF) - Samsung

部品番号
コンポーネント説明
メーカー
K9F1208D0A Datasheet PDF : 46 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
K9F1208D0A K9F1216D0A
K9F1208U0A K9F1216U0A
FLASH MEMORY
Memory Map
The device is arranged in four 128Mbit memory planes. Each plane contains 1,024 blocks and 528 byte(X8 device) or 264 word(X16
device) page registers. This allows it to perform simultaneous page program and block erase by selecting one page or block from
each plane. The block address map is configured so that multi-plane program/erase operations can be executed for every four
sequential blocks.
Figure 3. Memory Array Map
Plane 0
(1024 Block)
Block 0
Page 0
Page 1
Page 30
Page 31
Block 4
Page 0
Page 1
Page 30
Page 31
Plane 1
(1024 Block)
Block 1
Page 0
Page 1
Page 30
Page 31
Block 5
Page 0
Page 1
Page 30
Page 31
Plane 2
(1024 Block)
Block 2
Page 0
Page 1
Page 30
Page 31
Block 6
Page 0
Page 1
Page 30
Page 31
Plane 3
(1024 Block)
Block 3
Page 0
Page 1
Page 30
Page 31
Block 7
Page 0
Page 1
Page 30
Page 31
Block 4088
Page 0
Page 1
Page 30
Page 31
Block 4092
Page 0
Page 1
Page 30
Page 31
Block 4089
Page 0
Page 1
Page 30
Page 31
Block 4093
Page 0
Page 1
Page 30
Page 31
528byte Page Registers
528byte Page Registers
Block 4090
Page 0
Page 1
Page 30
Page 31
Block 4094
Page 0
Page 1
Page 30
Page 31
528byte Page Registers
Block 4091
Page 0
Page 1
Page 30
Page 31
Block 4095
Page 0
Page 1
Page 30
Page 31
528byte Page Registers
10

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]