K91G08Q0M データシートの表示（PDF） - Samsung

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K91G08Q0M

128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

Samsung 

K9F1G08Q0M K9F1G16Q0M

K9F1G08D0M K9F1G16D0M

K9F1G08U0M K9F1G16U0M

FLASH MEMORY

DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)

K9F1GXXX0M

Parameter

Symbol

Test Conditions

1.8V

2.65V

3.3V

Unit

Min Typ Max Min Typ Max Min Typ Max

Page Read with

Operating Serial Access

Current Program

Erase

ICC1

tRC=50ns, CE=VIL

IOUT=0mA

ICC2

-

ICC3

-

- 8 15 - 10 20 - 10 20

-

8 15 - 10 20 - 10 20 mA

- 8 15 - 10 20 - 10 20

Stand-by Current(TTL)

ISB1 CE=VIH, WP=PRE=0V/VCC -

-1

-

-

1

-

-

1

Stand-by Current(CMOS)

Input Leakage Current

Output Leakage Current

CE=VCC-0.2,

ISB2

WP=PRE=0V/VCC

ILI VIN=0 to Vcc(max)

ILO VOUT=0 to Vcc(max)

- 10 50 - 10 50 - 10 50

-

- ±10 -

- ±10 -

- ±10 µA

-

- ±10 -

- ±10 -

- ±10

Input High Voltage

VIH*

VCC

VCC VCC

VCC

VCC

-

-

-

2.0 -

-0.4

+0.3 -0.4

+0.3

+0.3

Input Low Voltage, All inputs VIL*

-

-0.3 - 0.4 -0.3 - 0.5 -0.3 - 0.8

K9F1GXXQ0M :IOH=-100µA

Vcc

Output High Voltage Level VOH K9F1GXXD0M :IOH=-100µA

-

VCCQ

-

-

- 2.4 -

-

V

-0.1

-0.4

K9F1GXXU0M :IOH=-400µA

Output Low Voltage Level

K9F1GXXQ0M :IOL=100uA

VOL K9F1GXXD0M :IOL=100µA -

K9F1GXXU0M :IOL=2.1mA

- 0.1 -

- 0.4 -

- 0.4

K9F1GXXQ0M :VOL=0.1V

Output Low Current(R/B) IOL(R/B) K9F1GXXD0M :VOL=0.1V 3 4 -

3

4

-

8 10 - mA

K9F1GXXU0M :VOL=0.4V

NOTE : VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.

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