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KF80BDT-TR データシートの表示(PDF) - STMicroelectronics

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KF80BDT-TR
ST-Microelectronics
STMicroelectronics ST-Microelectronics
KF80BDT-TR Datasheet PDF : 22 Pages
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KFxxB
Electrical characteristics
Table 9.
Symbol
Electrical characteristics for KF50 (refer to the test circuits, TJ = 25 °C, CI = 0.1 µF,
CO = 2.2 µF unless otherwise specified.)
Parameter
Test conditions
Min. Typ. Max. Unit
VO Output voltage
VI Operating input voltage
IO Output current limit
ΔVO Line regulation
ΔVO Load regulation
Id Quiescent current
IO = 50 mA, VI = 7 V
4.9
IO = 50 mA, VI = 7 V, Ta = -25 to 85°C
4.8
IO = 500 mA
VI = 6 to 20 V, IO = 5 mA
VI = 6.3 V, IO = 5 to 500 mA
VI = 6 to 20V, IO = 0mA
ON MODE
VI = 6.3 to 20V, IO=500mA
VI = 6 V
OFF MODE
f = 120 Hz
SVR Supply voltage rejection IO = 5 mA, VI = 7 ± 1 V
f = 1 kHz
f = 10 kHz
eN Output noise voltage
B = 10 Hz to 100 KHz
Vd Dropout voltage
IO = 200 mA
IO = 500 mA
VIL Control input logic low
Ta = -40 to 125°C
VIH Control input logic high
Ta = -40 to 125°C
2
II Control input current
VI = 6 V, VC = 6 V
CO
Output bypass
capacitance
ESR = 0.1 to 10 Ω, IO = 0 to 500 mA
2
5
5.1
V
5.2
20
V
1
A
3
18 mV
2
50 mV
0.5
1
mA
12
50 100 µA
76
71
dB
60
50
µV
0.2 0.35
V
0.4 0.7
0.8
V
V
10
µA
10
µF
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