KM62256D データシートの表示（PDF） - Samsung
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KM62256D Datasheet PDF : 9 Pages
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KM62256D Family
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Symbol
Supply voltage
Vcc
Ground
Vss
Input high voltage
VIH
Input low voltage
VIL
Note:
1. Commercial Product : TA=0 to 70°C, otherwise specified
Industrial Product : TA=-40 to 85°C, otherwise specified
2. Overshoot : VCC+3.0V in case of pulse width≤30ns
3. Undershoot : -3.0V in case of pulse width≤30ns
4. Overshoot and undershoot are sampled, not 100% tested
Min
4.5
0
2.2
-0.53)
CMOS SRAM
Typ
Max
Unit
5.0
5.5
V
0
0
V
-
Vcc+0.5V2)
V
-
0.8
V
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled not, 100% tested
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min
Max
Unit
-
8
pF
-
10
pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min Typ Max Unit
Input leakage current
ILI VIN=Vss to Vcc
-1
-
1 µA
Output leakage current
ILO CS=VIH or OE=VIH or WE=VIL, VIO=VSS to Vcc
-1
-
1 µA
Operating power supply current ICC IIO=0mA, CS=VIL, VIN=VIH or VIL, Read
-
5 10 mA
Average operating current
ICC1
Cycle time=1µs, 100% duty, IIO=0mA
CS≤0.2V, VIN≤0.2V, VIN≥Vcc -0.2V
Read -
Write
25
mA
- 20
ICC2 Cycle time=Min,100% duty, IIO=0mA, CS=VIL, VIN=VIH or VIL - 45 60 mA
Output low voltage
VOL IOL=2.1mA
-
- 0.4 V
Output high voltage
VOH IOH=-1.0mA
2.4 -
-
V
Standby Current(TTL)
ISB CS=VIH, Other inputs=VIH or VIL
-
-
1 mA
Standby Current (CMOS)
ISB1 CS≥Vcc-0.2V, Other inputs=0~Vcc
Low Power
-
Low Low Power -
1 30 µA
0.2 5 µA
Revision 1.0
November 1997
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