KM68512A データシートの表示（PDF） - Samsung
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KM68512A Datasheet PDF : 9 Pages
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KM68512A Family
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Symbol
Supply voltage
Vcc
Ground
Vss
Input high voltage
VIH
Input low voltage
VIL
Note
1. Commercial Product : TA=0 to 70°C, unless otherwise specified
Industrial Product : TA=-40 to 85°C, unless otherwise specified
2. Overshoot : VCC+3.0V in case of pulse width≤30ns
3. Undershoot : -3.0V in case of pulse width≤30ns
4. Overshoot and undershoot are sampled, not 100% tested
Min
4.5
0
2.2
-0.53)
Typ
Max
Unit
5.0
5.5
V
0
0
V
-
Vcc+0.5V2)
V
-
0.8
V
CAPACITANCE1)(f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min
Max
Unit
-
6
pF
-
8
pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Input leakage current
ILI VIN=Vss to Vcc
Output leakage current
ILO CS1=VIH or CS2=VIL or OE=VIH or WE=VIL, VIO=Vss to Vcc
Operating power supply current ICC IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIH or VIL
Average operating current
ICC1
Cycle time=1µs, 100% duty, IIO=0mA
CS1≤0.2V, CS2≥VCC-0.2V, VIN≤0.2V or VIN≥Vcc -0.2V
ICC2 Cycle time=Min, 100% duty, IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIH or VIL
Min Typ Max Unit
-1 - 1 µA
-1 - 1 µA
- 7 15 mA
- - 10 mA
- - 70 mA
Output low voltage
VOL IOL=2.1mA
- - 0.4 V
Output high voltage
VOH IOH=-1.0mA
2.4 - - V
Standby Current(TTL)
ISB CS1=VIH, CS2=VIL, Other inputs =VIH or VIL
- - 3 mA
Standby
Current
(CMOS)
KM68512AL/L-L
KM68512ALI/LI-L
ISB1
Low Power
CS1≥Vcc-0.2V, CS2≥Vcc-0.2V or CS2≤0.2V Low Low Power
Other inputs =0 ~ Vcc
Low Power
Low Low Power
-
-
2
1
100
20
µA
-
-
2
1
100
50
µA
4
Revision 4.0
January 1997
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