AO3419 データシートの表示（PDF） - KEXIN Industrial

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AO3419

P-Channel Enhancement Mode Field Effect Transistor

KEXIN Industrial 

SMD Type

P-Channel Enhancement Mode

Field Effect Transistor

KO3419(AO3419)

MOSFIECT

Features

VDS (V) = -20V

ID = -3.5 A

RDS(ON) 75m (VGS = -10V)

RDS(ON) 95m (VGS = -4.5V)

RDS(ON) 145m (VGS = -2.5V)

SOT-23

2.9+0.1

-0.1

0.4+0.1

-0.1

3

1

2

0.95+0.1

-0.1

1.9+0.1

-0.1

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Drain-Source Voltage

VDS

-20

Gate-Source Voltage

VGS

12

Continuous Drain TA=25

Current *1

TA=70

-3.5

ID

-2.8

Pulsed Drain Current *2

IDM

-15

Power Dissipation *1 TA=25

TA=70

1.4

PD

0.9

Thermal Resistance.Junction-to-Ambient

R JA

125

Thermal Resistance.Junction-to-Case

R JC

60

Junction and Storage Temperature Range

TJ, TSTG

-55 to 150

*1The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz.

Copper, in a still air environment with TA =25

*2 Repetitive rating, pulse width limited by junction temperature.

Unit

V

V

A

W

/W

/W

Unit: mm

0.1+0.05

-0.01

11..BGasae te

22.ESmoituterrce

33..cDollreactionr

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