KSC2881(2002) データシートの表示（PDF） - Fairchild Semiconductor

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KSC2881
(Rev.:2002)

NPN Epitaxial Silicon Transistor

Fairchild Semiconductor 

KSC2881

Power Amplifier

• Collector-Emitter Voltage : VCEO=120V

• Current Gain Bandwidth Productor : fT=120MHz

• Collector Dissipation : PC=1~2W in Mounted on Ceramic Board

• Complement to KSA1201

1

SOT-89

1. Base 2. Collector 3. Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Symbol

Parameter

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current

IB

Base Current

PC

Collector Power Dissipation

PC*

TJ

Junction Temperature

TSTG

Storage Temperature

* Mounted on Ceramic Board (250mm2x0.8mm)

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol

BVCEO

BVEBO

ICBO

IEBO

hFE

VCE (sat)

VBE (on)

fT

Cob

Parameter

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

Current Gain Bandwidth Product

Output Capacitance

Test Condition

IC=10µA, IB=0

IE=1mA, IC=0

VCB=120V, IE=0

VBE=5V, IC=0

VCE=5V, IC=100mA

IC=500mA, IB=50mA

VCE=5V, IC=500mA

VCE=5V, IC=100mA

VCB=10V, IE=0, f=1MHz

hFE Classification

Classification

hFE

O

80 ~ 160

Marking

Value

120

120

5

800

160

500

1,000

150

-55 ~ 150

Units

V

V

V

mA

mA

mW

mW

°C

°C

Min.

120

5

80

Typ.

120

Max.

100

100

240

1.0

1.0

30

Units

V

V

nA

nA

V

V

MHz

pF

Y

120 ~ 240

SCX

hFE grade

©2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002

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