KSD882(2000) データシートの表示（PDF） - Fairchild Semiconductor

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KSD882
(Rev.:2000)

NPN Epitaxial Silicon Transistor

Fairchild Semiconductor 

KSD882

Audio Frequency Power Amplifier

Low Speed Switching

• Complement to KSB772

1

TO-126

1. Emitter 2.Collector 3.Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Symbol

Parameter

VCBO

Collector- Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter- Base Voltage

IC

Collector Current (DC)

ICP

*Collector Current (Pulse)

IB

Base Current

PC

Collector Dissipation (TC=25°C)

PC

Collector Dissipation (Ta=25°C)

TJ

Junction Temperature

TSTG

Storage Temperature

* PW≤10ms, Duty Cycle≤50%

Value

40

30

5

3

7

0.6

10

1

150

- 55 ~ 150

Units

V

V

V

A

A

A

W

W

°C

°C

Electrical Characteristics TC=25°C unless otherwise noted

Symbol

Parameter

Test Condition

ICBO

IEBO

hFE1

hFE2

VCE(sat)

VBE(sat)

fT

Cob

Collector Cut-off Current

Emitter Cut-off Current

*DC Current Gain

*Collector-Emitter Saturation Voltage

*Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed

VCB = 30V, IE = 0

VEB = 3V, IC = 0

VCE = 2V, IC = 20mA

VCE = 2V, IC = 1A

IC = 2A, IB = 0.2A

IC = 2A, IB = 0.2A

VCE = 5V, IE = 0.1A

VCB = 10V, IE = 0

f = 1MHz

Min.

30

60

Typ.

150

160

0.3

1.0

90

45

Max.

1

1

Units

µA

µA

400

0.5

V

2.0

V

MHz

pF

hFE Classificntion

Classification

hFE2

R

60 ~ 120

O

100 ~ 200

Y

160 ~ 320

G

200 ~ 400

©2000 Fairchild Semiconductor International

Rev. A, February 2000

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