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L4949EPTR-E データシートの表示(PDF) - STMicroelectronics

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L4949EPTR-E
ST-Microelectronics
STMicroelectronics ST-Microelectronics
L4949EPTR-E Datasheet PDF : 19 Pages
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Electrical specifications
L4949ED-E, L4949EP-E
2.3
Electrical characteristics
VS = 14 V; -40 °C < Tj < 125 °C unless otherwise specified
Table 5. Electrical characteristics
Symbol
Parameter
Test condition
Min. Typ. Max. Unit
VO
Output voltage
TJ = 25 °C; IO = 1 mA
4.95
5
5.05
V
VO
Output voltage
6 V < VIN < 28 V, 1 mA < IO < 50 mA 4.90
5
5.10
V
VO
Output voltage
VIN = 40 V;
T < 1 s; 5 mA < IO < 100 mA
4.75
5.25
V
VDP
Dropout voltage
IO = 10 mA
IO = 50 mA
IO = 100 mA
0.1 0.25
V
0.2 0.4
V
0.3 0.5
V
Input to output voltage
VIO
difference in undervoltage VIN = 4 V, IO = 35 mA
condition
0.4
V
Iouth(1) Max output leakage
VIN = 25 V, VO = 5.5 V
20
50
80
µA
VOL
Line regulation
6 V < VIN < 28 V; IO = 1 mA
20
mV
VOLO Load regulation
1 mA < IO < 100 mA
30
mV
ILIM
Current limit
VO = 4.5 V
VO = 4.5 V; TJ = 25 °C
VO = 0 V(2)
105 200 400 mA
120
400 mA
100
mA
IQSE Quiescent current
IO = 0.3 mA; TJ < 100 °C
200 300 µA
IQ
Quiescent current
IO = 100 mA
5
mA
1. With this test we guarantee that with no output current the output voltage will not exceed 5.5V
2. Foldback characteristic
Table 6. Reset
Symbol
Parameter
VRT
Reset threshold voltage
VRTH
tRD
VRL
IRH
VCTth
VCTth, hy
Reset threshold hysteresis
Reset pulse delay
Reset output low voltage
Reset output high leakage
current
Delay comparator threshold
Delay comparator threshold
hysteresis
Test condition
Min.
50
CT = 100 nF; TR 100 µs
55
RRES = 10 KΩ to VO VS 1.5V
VRES = 5 V
Typ.
VO -
0.5V
100
100
2
Max.
200
180
0.4
1
Unit
V
mV
ms
V
µA
V
100
mV
8/19
Doc ID 16823 Rev 1

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