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L4964 データシートの表示(PDF) - STMicroelectronics

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L4964
ST-Microelectronics
STMicroelectronics ST-Microelectronics
L4964 Datasheet PDF : 13 Pages
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L4964
ELECTRICAL CHARACTERISTICS (continued)
(refer to the test circuits Tj = 25oC, Vi = 25V, unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit Fig.
ERROR AMPLIFIER (continued)
I10 Input Bias Current
V10 = 5.2V, S1 : B
Gv DC Open Loop Gain
V9 = 1V to 3V, S1 : A, S2 : C
OSCILLATOR AND PWM COMPARATOR
2
20
µA 6c
40
55
dB 6c
–I7 Input Bias Current of
PWM Comparator
V7 = 0.5V to 3.5V
–I11 Oscillator Source Current V11 = 2V, S1 : A, S2 : B
4
10
µA 6a
mA 6a
RESET
V12R
V12F
Rising Threshold Voltage
Vi = 9 V to 36 V, S1 : B, S2 : B
Falling Threshold Voltage
Vref
Vref
Vref
V 6d
- 150mV - 100mV - 50mV
4.75
Vref
Vref
V 6d
- 150mV - 100mV
V13D
V13H
Delay Threshold Voltage
Delay Threshold Voltage V12 = 5.3 V, S1 : A, S2 : B
Hysteresis
4.3
4.5
4.7
V 6d
100
mV 6d
V14S Output Saturation Volt. I14 = 5mA, V12 = 4.7V - S1, S2 : B
0.4
V 6d
I12 Input Bias Current
V12 = 0V to Vref, S1 : B, S2 : B
1
10
µA 6d
–I13 so Delay Source Current
I13 si Delay Sink Current
V13 = 3V, S1 : A, S2 : B
V12 = 5.3V
V12 = 4.7V
6d
60
110
150 µA
8
mA
I14 Output Leakage Current Vi = 36V, V12 = 5.3V, S1 : B, S2 : A
100
µA 6d
Figure 4 : Dynamic Test Circuit
C7, C8 : EKR (ROE)
L1 : L = 300 µH at 8 A
R = 500 m
Core type : MAGNETICS 58930 - A2 MPP
N° turns : 43 Wire Gauge : 1 mm (18 AWG)
6/13

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