L6590A データシートの表示（PDF） - STMicroelectronics
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L6590A Datasheet PDF : 19 Pages
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L6590A
ELECTRICAL CHARACTERISTCS (Tj = -25 to 125°C, Vcc = 10V; unless otherwise specified))
Symbol
Parameter
Test Condition
Min. Typ. Max. Unit
POWER SECTION
V(BR)DSS Drain Source Voltage
Id < 200 µA; Tj = 25 °C
700
V
Idss Off state drain current
Vds = 560V; Tj = 125 °C
200
µA
RDS(on) Drain-to-Source on resistance
RDS(on) vs. Tj: see fig. 17
Id = 120mA; Tj = 25 °C
Id = 120mA; Tj = 125 °C
13
16
Ω
23
28
PWM CONTROL INPUT
VCOMPH Vout High
Isource = -0.5mA
3.8
4.5
V
ICOMP Source Current
1.5V < VCOMP < 3.5V
-0.5
-1
-2.5 mA
RCOMP Dynamic Resistance
1.5V < VCOMP < 3.5V
9
kΩ
OSCILLATOR SECTION
Fosc Oscillator Frequency
Tj = 25 °C
58
65
72
kHz
52
65
74
Dmin Min. Duty Cycle
VCOMP = 1V
0
%
Dmax Max. Duty Cycle
VCOMP = 4V
67
70
73
%
DEVICE OPERATION SECTION
Iop Operating Supply Current
fsw = Fosc
4.5
7
mA
IQ Quiescent Current
MOS disabled
3.5
6
mA
Icharge VCC charge Current
Vcc = 0V to Vccon - 0.5V;
Vds = 100 to 400V; Tj = 25°C
-3
-4.5
-7
mA
Vcc = 0V to Vccon - 0.5V;
Vds = 100 to 400V
-2.5 -4.5 -7.5 mA
VCCclamp VCC Clamp Voltage
Iclamp = 10mA (*)
15.5 16.5 17.5
V
Vccon Start Threshold
(*)
voltage
13.5 14.5 15.5
V
Vccoff Min operating voltage after Turn (*)
on
6
6.6
7.2
V
Vdsmin Drain start voltage
40
V
CIRCUIT PROTECTIONS
Ipklim Pulse-by-pulse Current Limit
di/dt = 120 mA/ µs
550 625 700 mA
VccOVP Overvoltage Protection
Icc = 10 mA (*)
15
16
17
V
LEB Masking Time
After MOSFET turn-on (**)
120
ns
STANDBY SECTION
FSB Oscillator Frequency
19
22
25
kHz
4/19
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