L6591TR データシートの表示（PDF） - STMicroelectronics

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L6591TR

PWM controller for ZVS half bridge

STMicroelectronics 

L6591

Table 4.

Symbol

Electrical characteristics (continued)

Parameter

Test condition

tf

Fall time

tr

Rise time

UVLO saturation

Vcc = 0 to VccOn,

Isink = 1 mA

High-side gate driver (voltages referred to FGND)

VHVGL Output low-voltage

VHVGH

Isourcepk

Isinkpk

Output high-voltage

Peak source current (2)

Peak sink current (2)

tf

Fall time

tr

Rise time

Pull-down resistor

Isink = 200 mA

Isource = 5 mA

1. Parameters tracking each other.

2. Parameters guaranteed by design.

Electrical characteristics

Min.

Typ.

40

80

Max. Unit

ns

ns

1.1

V

1.5

V

11 11.9

V

-0.3

A

0.8

A

40

ns

80

ns

25

kΩ

Doc ID 14821 Rev 6

11/41

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