LC5521D Absolute Maximum Ratings TA = 25°C, unless otherwise specified
Characteristic
Symbol
Notes
Drain Current1
Single Pulse Avalanche Energy1
Supply Voltage for Controller Chip
OCP Pin Voltage
FB Pin Voltage
OVP Pin Voltage
Allowable Power Dissipation of
MOSFET2
IDPeak
EAS
VCC
VOCP
VFB
VOVP
PD1
Single pulse
ILPeak = 2.0 A, VDD = 99 V, L = 20 mH
Operating Ambient Temperature
TOP
Storage Temperature
Tstg
Channel Temperature
Tch
1Refer to each individual product datasheet for details.
2Mounted on a 15 mm × 15 mm PCB.
Pins
8–1
8–1
2–1
3–1
4–1
6–1
8–1
―
―
―
Rating
Unit
2.5
A
47
mJ
35
V
−2.0 to 5.0
V
−0.3 to 7.0
V
−0.3 to 5.0
V
0.97
W
−55 to 125
°C
−55 to 125
°C
150
°C
LC5521D ELECTRICAL CHARACTERISTICS (MOSFET) TA = 25°C, unless otherwise specified
Characteristic
Symbol
Test Conditions
Pins
Min.
Typ.
Drain-to-Source Breakdown Voltage1
VDSS
8–1
650
―
Drain Leakage Current
On Resistance1
IDSS
RDS(on)
8–1
―
―
8–1
―
―
Switching Time1
tf
8–1
―
―
Thermal Resistance1,2
Rθch-c Between channel and case
―
―
―
1Refer to each individual product datasheet for details.
2The thermal resistance between the channels of the MOSFET and the case. TC measured at the center of the case top surface.
Max.
―
300
3.95
250
42
Unit
V
μA
Ω
ns
°C/W
LC5500-AN, Rev.1.2
11
SANKEN ELECTRIC CO., LTD.