K2158(M) データシートの表示（PDF） - NEC => Renesas Technology

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K2158(M)

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

NEC => Renesas Technology 

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK2158

N-CHANNEL MOS FET

FOR HIGH-SPEED SWITCHING

The 2SK2158 is an N-channel vertical type MOS FET featur-

ing an operating voltage as low as 1.5 V. Because it can be

driven on a low voltage and it is not necessary to consider

driving current, the 2SK2158 is suitable for use in low-voltage

portable systems such as headphone stereo sets and camcorders.

FEATURES

• Capable of drive gate with 1.5 V

• Because of high input impedance, there is no need to

consider driving current.

• Bias resistance can be omitted, enabling reduction in total

number of parts.

PACKAGE DIMENSIONS

(in millimeters)

2.8 ± 0.2

1.5

0.65+–00..115

2

1

3

Marking

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

EQUIVALENT CIRCUIT

3

Marking: G23

2

Gate protection

diode

Internal

diode

1

PIN CONNECTION

1. Source (S)

2. Gate (G)

3. Drain (D)

PARAMETER

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation

Channel Temperature

Storage Temperature

SYMBOL

VDSS

VGSS

ID(DC)

ID(pulse)

PT

Tch

Tstg

VGS = 0

VDS = 0

TEST CONDITIONS

PW ≤ 10 ms,

Duty Cycle ≤ 50 %

RATINGS

50

±7.0

±0.1

±0.2

200

150

–55 to +150

UNIT

V

V

A

A

mW

˚C

˚C

Document No. D11234EJ1V0DS00 (1st edition)

Date Published June 1996 P

Printed in Japan

©

1996

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