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LE80ABZ-TR データシートの表示(PDF) - STMicroelectronics

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LE80ABZ-TR
ST-Microelectronics
STMicroelectronics ST-Microelectronics
LE80ABZ-TR Datasheet PDF : 39 Pages
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Electrical characteristics
4
Electrical characteristics
LExxAB LExxC
Table 4.
Symbol
Electrical characteristics for LE12AB (refer to the test circuits, TJ = 25 °C, CI = 0.1 µF,
CO = 2.2 µF unless otherwise specified.)
Parameter
Test conditions
Min. Typ. Max. Unit
VO Output voltage
VI Operating input voltage
IO Output current limit
ΔVO Line regulation
ΔVO Load regulation
Id Quiescent current
IO = 10 mA, VI = 3.3 V
1.225 1.25 1.275
V
IO = 10 mA, VI = 3.3 V, TA = -25 to 85°C 1.2
1.3
IO = 100 mA
2.5
18
V
150
mA
VI = 2.5 to 18 V, IO = 0.5 mA
VI = 2.8 V, IO = 0.5 to 100 mA
VI = 2.5 to 18V, IO = 0mA
ON MODE
VI = 2.5 to 18V, IO=100mA
VI = 6 V
OFF MODE
f = 120 Hz
3
15 mV
3
15 mV
0.5
1
mA
1.5
3
50 100 µA
82
SVR Supply voltage rejection IO = 5 mA, VI = 3.5 ± 1 V f = 1 kHz
77
dB
f = 10 kHz
60
eN Output noise voltage
B = 10 Hz to 100 kHz
50
µV
Vd Dropout voltage
VIL Control input logic low
VIH Control input logic high
II Control input current
CO
Output bypass
capacitance
IO = 100 mA, TA = -40 to 125°C
TA = -40 to 125°C
TA = -40 to 125°C
VI = 6 V, VC = 6 V
ESR = 0.1 to 10 Ω, IO = 0 to 100 mA
1.25
V
0.8
V
2
V
10
µA
2
10
µF
8/39

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