LM285 データシートの表示（PDF） - ON Semiconductor

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LM285

MICROPOWER VOLTAGE REFERENCE DIODES

ON Semiconductor 

LM285, LM385B

ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)

LM285−1.2

Characteristic

Symbol

Min

Typ

Max

Reverse Breakdown Voltage Change with Current DV(BR)R

IRmin v IR v 1.0 mA, TA = +25°C

−

TA = Tlow to Thigh (Note 2)

−

1.0 mA v IR v 20 mA, TA = +25°C

−

TA = Tlow to Thigh (Note 2)

−

−

1.0

−

1.5

−

10

−

20

Reverse Dynamic Impedance

IR = 100 mA, TA = +25°C

Z

−

0.6

−

Average Temperature Coefficient

DV(BR)/DT

20 mA v IR v 20 mA, TA = Tlow to Thigh (Note 2)

−

80

−

Wideband Noise (RMS)

IR = 100 mA, 10 Hz v f v 10 kHz

n

−

120

−

Long Term Stability

IR = 100 mA, TA = +25°C ± 0.1°C

S

−

20

−

2. Tlow

Thigh

Tlow

Thigh

= −40°C for LM285−1.2, LM285−2.5

= +85°C for LM285−1.2, LM285−2.5

= 0°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5

= +70°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5

LM385−1.2/LM385B−1.2

Min

Typ

Max

−

−

2.0

−

−

2.5

−

−

20

−

−

25

−

0.6

−

−

80

−

−

120

−

−

20

−

Unit

mV

W

ppm/°C

mV

ppm/kHR

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