US1SERIES データシートの表示（PDF） - Philips Electronics
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US1SERIES Datasheet PDF : 12 Pages
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Philips Semiconductors
SMA ultra fast low-loss
controlled avalanche rectifiers
Product specification
US1 series
SYMBOL
PARAMETER
IFSM
non-repetitive peak forward current
Tstg
storage temperature
Tj
junction temperature
CONDITIONS
t = 8.3 ms half sine wave;
Tj = 25 °C prior to surge;
VR = VRRMmax
See Fig.3
MIN. MAX. UNIT
−
25
A
−65
+175 °C
−65
+175 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VF
forward voltage
US1A to US1G
IF = 1 A;
see Fig.4
US1J
see Fig.5
IR
reverse current
VR = VRRMmax; see Figs 6 and 7
VR = VRRMmax; Tj = 165 °C; see Figs 6 and 7
trr
reverse recovery time
when switched from IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A; see Fig.12
Cd
diode capacitance
VR = 4 V; f = 1 MHz;
US1A to US1G
see Fig.8
US1J
see Fig.9
TYP. MAX. UNIT
−
1.1
V
−
1.4
V
−
10
µA
−
50
µA
−
50
ns
14
−
pF
10
−
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point; see Fig.10
thermal resistance from junction to ambient
CONDITIONS
note 1
note 2
VALUE
27
100
150
UNIT
K/W
K/W
K/W
Notes
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm. For more
information please refer to the ‘General Part of associated Handbook’.
2000 Feb 14
3
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