RMPA2000-58 データシートの表示（PDF） - Raytheon Company
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RMPA2000-58 Datasheet PDF : 3 Pages
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Description
RMPA2000-58
1.8-2.0 GHz GaAs MMIC
Power Amplifier
PRODUCT INFORMATION
The Raytheon RMPA2000-58 is a fully monolithic power amplifier in a surface mount package for use in wireless
applications in the 1.8 to 2.0 GHz ISM frequency band. The amplifier may be biased for linear, class AB or class F
for high efficiency applications. On-chip matching components allow operation in a 50-ohm system with no
external matching components. The MMIC utilizes Raytheon’s 0.25µm power pHEMT process.
Features
40% Power Added Efficiency
31 dBm Output Power, typical, at Vd = +7V
28 dBm Output Power, typical, at Vd = +5V
No external RF matching components
Small Package Outline: 0.28” x 0.28” x 0.07”
Absolute
Maximum
Ratings
Electrical
Characteristics
At 25ºC, Zo = 50 ohms,
unless otherwise stated
Functional
Block Diagram
Rating
Symbol Value
DC Supply Voltage
VDD
+8
DC Negative Bias Voltage
VGG
-5
RF Input Power (from (50Ω source) PIN
10
Drain to Source current
Ids
700
Gate current
Ig
5
Channel temperature
Tch
150
Operating Case Temperature Range TC -40 to 100
Storage Temperature Range
TS -40 to 125
Unit
Volts
Volts
dBm
mA
mA
°C
°C
°C
Parameter
Frequency Range
Gain 1,2,3
Output Power, P1dB 1,3
Ass.Power Added Efficiency
Output Power, P1dB 4
Ass. Power added efficiency
Input Return Loss (50Ω)
Min Typ Max Unit
1800 1900 2000 MHz
30
dB
28
dBm
35
%
31
dBm
40
%
7.5
dB
VD1
Pin #5
VDD
Pin #4
RF IN
Pin #8
RF OUT
Pin #2
www.raytheon.com/micro
VG1
Pin #10
VG2
Pin #11
PMBG12 Package
Notes:
1. Idq=300mA, Vd1=Vd2=5.0V
2. Pin=-3dBm
3. Production testing includes Gain, Output power and input return loss at
Vd1=Vd2=5.0V, Vg1=Vg2=-0.5V (nominal), adjusted for Idq=300mA, Pin=-3dBm and at F=1.90 GHz.
4. Vd1=Vd2=+7V, Idq=400mA
Characteristic performance data and specifications are subject to change without notice.
Revised April 7, 2000
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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