IXFE80N50 データシートの表示（PDF） - IXYS CORPORATION
部品番号
コンポーネント説明
メーカー
IXFE80N50 Datasheet PDF : 2 Pages
| |||
HiPerFETTM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Preliminary data sheet
Symbol
VDSS
VDGR
VGS
VGSM
I
D25
I
DM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
T
stg
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C, Chip capability
TC = 25°C, Note 1
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
VISOL
Md
Weight
50/60 Hz, RMS t = 1 min
IISOL ≤ 1 mA
t=1s
Mounting torque
Terminal connection torque
IXFE 80N50
D
G
S
S
Maximum Ratings
500
V
500
V
±20
V
±30
V
72
A
320
A
80
A
64
mJ
6
J
5 V/ns
580
W
-40 ... +150
°C
150
°C
-40 ... +150
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
19
g
Symbol
VDSS
VGH(th)
I
GSS
IDSS
RDS(on)
Test Conditions
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 8 mA
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = IT
Note 2
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
500
2
TJ = 25°C
TJ = 125°C
V
4V
±200 nA
100 µA
2 mA
55 mΩ
VDSS
ID25
RDS(on)
= 500 V
= 72 A
= 55 mΩ
ISOPLUS 227TM (IXFE)
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•Conforms to SOT-227B outline
•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Low cost
• Easy to mount
• Space savings
• High power density
© 2002 IXYS All rights reserved
98898A (5/02)
Share Link: 