IXFE80N50 データシートの表示（PDF） - IXYS CORPORATION
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IXFE80N50 Datasheet PDF : 2 Pages
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IXFE 80N50
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 15 V; ID = IT, Note 2
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
RG = 1 Ω (External),
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
50
70
S
9890
pF
1750
pF
460
pF
61
ns
70
ns
102
ns
27
ns
380
nC
80
nC
173
nC
0.22 K/W
0.07
K/W
ISOPLUS-227 B
Source-Drain Diode
Symbol
I
S
Test Conditions
V =0V
GS
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
80 A
ISM
Repetitive;
pulse width limited by TJM
320 A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.3 V
Please see IXFN80N50 data sheet
for characteristic curves.
trr
IF = 25A, -di/dt = 100 A/µs, VR = 100 V
250 ns
QRM
1.2
µC
I
8
A
RM
Notes: 1. Pulse width limited by TJM.
2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%.
3. IT Test current: IT = 40 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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