LTC4359 データシートの表示（PDF） - Linear Technology
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LTC4359 Datasheet PDF : 16 Pages
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Typical Performance Characteristics
Gate Turn-Off Time
vs Initial Over Drive
200 VIN = 12V
∆VSD = VINITIAL –1V
150
100
50
GATE Turn-Off Time
vs Final OverDrive
1500
VIN = 12V
∆VSD = 45mV VFINAL
1000
500
0
0
0.25
0.5
0.75
1
VINITIAL (V)
4359 G10
0
0
–0.25
–0.5
–0.75
–1
VFINAL (V)
4359 G11
LTC4359
Load Current
vs Forward Voltage Drop
10
FDMS86101
8
FDB3632
6
4
FDS3732
2
0
0
25
50
75
100
∆VSD (V)
4359 G12
Pin Functions
Exposed Pad (DCB Package Only): Exposed pad may be
left open or connected to VSS.
GATE: Gate Drive Output. The GATE pin pulls high, enhanc-
ing the N-channel MOSFET when the load current creates
more than 30mV of voltage drop across the MOSFET.
When the load current is small the gate is actively driven
to maintain 30mV across the MOSFET. If reverse current
flows, a fast pull-down circuit connects the GATE to the
SOURCE pin within 0.3μs, turning off the MOSFET.
IN: Voltage Sense and Supply Voltage. IN is the anode of
the ideal diode. The voltage sensed at this pin is used to
control the MOSFET gate.
NC (MS Package Only): No Connection. Not internally
connected.
OUT: Drain Voltage Sense. OUT is the cathode of the ideal
diode and the common output when multiple LTC4359s
are configured as an ideal diode-OR. It connects either di-
rectly or through a 2k resistor to the drain of the N-channel
MOSFET. The voltage sensed at this pin is used to control
the MOSFET gate.
SHDN: Shutdown Control Input. The LTC4359 can be shut
down to a low current mode by pulling the SHDN pin below
0.6V. Pulling this pin above 2V or disconnecting it allows
an internal 2μA current source to turn the part on. Maintain
board leakage to less than 100nA for proper operation.
The SHDN pin can be pulled up to 100V or down to – 40V
with respect to VSS without damage. If shutdown feature
is not used, connect SHDN to IN.
SOURCE: Source Connection. Source is the return path
of the gate fast pull-down. Connect this pin as close as
possible to the source of the external N-channel MOSFET.
VSS: Supply Voltage Return and Device Ground.
4359f
5
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