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LTC4365 データシートの表示(PDF) - Linear Technology

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LTC4365 Datasheet PDF : 16 Pages
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LTC4365
APPLICATIONS INFORMATION
Figure 4 shows the timing associated with the UV pin.
Once a UV fault propagates through the UV comparator
(tFAULT), the FAULT output is asserted low and a 50mA
current sink discharges the GATE pin. As VOUT falls, the
GATE pin tracks VOUT.
UV
VUV
VUV + VUVHYST
FAULT
GATE
tFAULT
tFAULT
tGATE(FAST)
tRECOVERY
EXTERNAL N-CHANNEL MOSFET
TURNS OFF
4365 F04
Figure 4. UV Timing (OV < (VOV – VOVHYST), SHDN > 1.2V)
Figure 5 shows the timing associated with the OV pin.
Once an OV fault propagates through the OV comparator
(tFAULT), the FAULT output is asserted low and a 50mA
current sink discharges the GATE pin. As VOUT falls, the
GATE pin tracks VOUT.
OV
VOV
VOV – VOVHYST
tFAULT
tFAULT
FAULT
GATE
tGATE(FAST)
tRECOVERY
EXTERNAL N-CHANNEL MOSFET
TURNS OFF
4365 F05
Figure 5. OV Timing (UV > (VUV + VUVHYST), SHDN > 1.2V)
When both the UV and OV faults are removed, the external
MOSFET is not immediately turned on. The input supply
must remain within the user selected power good window
for at least 36ms (tRECOVERY) before the load is again
connected to the supply. This recovery timeout period
filters noise (including line noise) at the input supply and
prevents chattering of power at the load.
Procedure for Selecting UV/OV External Resistor Values
The following 3-step procedure helps select the resistor
values for the resistive divider of Figure 3. This procedure
minimizes UV and OV offset errors caused by leakage
currents at the respective pins.
1. Choose maximum tolerable offset at the UV pin,
VOS(UV). Divide by the worst case leakage current at
the UV pin, IUV (10nA). Set the sum of R1 + R2 equal
to VOS(UV) divided by 10nA. Note that due to the
presence of R3, the actual offset at UV will be slightly
lower:
R1+ R2 = VOS(UV)
IUV
2. Select the desired VIN UV trip threshold, UVTH. Find
the value of R3:
( ) R3 = 2 •
VOS(UV )
IUV
UVTH – 0.5V
3. Select the desired VIN OV trip threshold, OVTH. Find
the values of R1 and R2:
VOS(UV) +R3
R1= IUV
2 • OVTH
R2 = VOS(UV) – R1
IUV
The example of Figure 3 uses standard 1% resistor values.
The following parameters were selected:
VOS(UV) = 3mV
IUV = 10nA
UVTH = 3.5V
OVTH = 18V
4365f
10

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